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FDD4243
40V P-Channel PowerTrench ? MOSFET
- 40V, - 14A, 44m ?
November 2007
Features
Max r DS(on) = 44m ? at V GS = -10V, I D = -6.7A
Max r DS(on) = 64m ? at V GS = -4.5V, I D = -5.5A
High performance trench technology for extremely low r DS(on)
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench ? technology to
deliver low r DS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications.
RoHS Compliant
Application
Inverter
Power Supplies
S
G
S
T O -2 K
D -PA 52
(TO -252)
D
G
D
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
- 40
±20
Units
V
V
Drain Current
-Continuous (Package limited)
T C = 25°C
- 14
I D
-Continuous (Silicon limited)
-Continuous
T C = 25°C
T A = 25°C
(Note 1)
(Note 1a)
- 24
- 6.7
A
-Pulsed
-60
E AS
Single Pulse Avalanche Energy
(Note 3)
84
mJ
P D
T J , T STG
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
T C = 25°C
(Note 1a)
42
3
- 55 to +150
W
° C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3.0
40
°C/W
Package Marking and Ordering Information
Device Marking
FDD4243
Device
FDD4243
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
?2007 Fairchild Semiconductor Corporation
FDD4243 Rev.C1
1
www.fairchildsemi.com
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